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    Weitere Titel des Verlages

    Physics and Properties of Narrow Gap Semiconductors

    Autoren:

    Verlag:
    Springer-Verlag   Weitere Titel dieses Verlages anzeigen

    Erschienen: November 2007
    Seiten: 608
    Sprache: Englisch
    Illustration: 240 schw.-w. Abb.
    Maße: 244x165x38
    Einband: Leinen (Buchleinen)
    Reihe: Microdevices
    ISBN: 0387747435
    EAN: 9780387747439

    Inhaltsverzeichnis

    Contents
    1 Introduction 1
    1.1 Narrow Gap Semiconductors 1
    1.2 Physics of Infrared Photo-Electronics 9
    1.2.1 Infrared photo-electronics 9
    1.2.2 Thermal infrared detector materials: uncooled detectors 10
    1.2.3 Light emitting devices 11
    1.2.4 Process of infrared physics 11
    1.2.5 Infrared materials research, device, and Applications status... 13
    References 15
    2 Crystals 19
    2.1 Theory of Crystal Growth 19
    2.1.1 Introduction 19
    2.1.2 The thermodynamics of crystal growth 23
    2.1.3 The dynamics of crystal growth 28
    2.1.4 Applications of phase diagrams in crystal growth 32
    2.1.5 Segregation coefficient 42
    2.1.6 Freezing process 48
    2.2 Bulk Crystal Growth Methods 53
    2.2.1 Pulling technique 54
    2.2.2 Bridgman method 62
    2.2.3 The half-melt and the Te solvent methods 68
    2.2.4 Solid state re-crystallization applied to HgCdTe 72
    2.3 Liquid Phase Epitaxy 76
    2.3.1 LPE growth 77
    2.3.2 LPE process 83
    2.3.3 Comparison of different LPE techniques 90
    2.3.4 Quality control of HgCdTe LPE films 93
    2.4 Molecular Beam Epitaxy Growth of Thin Films 95
    2.4.1 Overview of the molecular beam epitaxy process 96
    2.4.2 Reflection high-energy electron diffraction (RHEED) 101
    2.4.3 Monitoring the growth temperature 103
    2.4.4 Composition control 110
    2.5 Perfection of Crystals 116
    2.5.1 X-ray double-crystal diffraction 116
    2.5.2 Morphology 127
    2.5.3 Precipitated phase in Hg I-x Cd x Te epitaxial films 130
    2.5.4 Native point defects 136
    References 144
    3 Band Structures 151
    3.1 General Description of Band Structures 151
    3.1.1 Band structure theory methods 151
    3.1.2 A brief treatment of band structures of narrow gap semiconductors 155
    3.2 The k p Perturbation Method and Secular Equations 161
    3.2.1 The k p formalism 161
    3.2.2 Complete secular equation 164
    3.2.3 Selection rules 170
    3.3 Calculation of Band Structures 180
    3.3.1 Solution at K 0 =0 180
    3.3.2 First order perturbation correction due to the k p term 182
    3.3.3 Perturbation with both hp and ( Δ Fxp). σ included 183
    3.3.4 Second order perturbation between Ф ia and Ф iß 188
    3.3.5 Contribution from the Linear K Term H kso 191
    3.4 Parameters of the Energy Bands 195
    3.4.1 The energy gap 195
    3.4.2 The electron effective mass of the conduction band 212
    3.4.3 The momentum matrix element and the heavy-hole effective mass m hh 220
    3.4.4 Reference 221
    3.4.5 Appendix 3A: Crystallography and the Bloch Theorem 227
    3.4.6 Appendix 3B: Overview of the hp Method 234
    4 Optical Properties 239
    4.1 Optical Constants and the Dielectric Function 239
    4.1.1 Fundamentals 239
    4.1.2 Kramers-Kronig (KK) relation and optical constants 242
    4.1.3 Dispersion of the refractive index 246
    4.1.4 Effect of electric and magnetic fields on optical constants 252
    4.2 Theory and Experiment of Interband Optical Transitions 256
    4.2.1 The theory of direct interband optical transitions 256
    4.2.2 Experimental investigations of interband optical transitions. 266
    4.2.3 Indirect interband transitions 274
    4.3 Intrinsic Absorption Spectra Expressions 279
    4.3.1 The absorption edge 279
    4.3.2 An analytic expression for the intrinsic absorption band 285
    4.3.3 Other expressions for the intrinsic absorption coefficient 291
    4.4 Direct Measurements of Optical Constants 296
    4.4.1 Introduction 296
    4.4.2 The principles of spectroscopic ellipsometry 298
    4.4.3 Operational configuration 302
    4.4.4 Investigation of the optical constants of Hg 1-X Cd x Te by infrared spectroscopic ellipsometry 305
    4.4.5 In situ monitoring of the composition during Hg1 -x Cd x Te growth 309
    4.5 Optical Effects Induced by Free Carriers 316
    4.5.1 Moss-Burstein effect 316
    4.5.2 General theory of free carrier absorption 328
    4.5.3 Free carrier absorption of Hg 1-x Cd x Te epitaxial films 334
    4.5.4 Magneto-optic effect of free carriers 347
    4.6 Optical Characterization of Materials 356
    4.6.1 Using infrared-absorption spectra to determine the alloy composition of Hg 1-x Cd x Te 357
    4.6.2 Transverse compositional uniformity of Hg 1-x Cd x Te samples 361
    4.6.3 The longitudinal compositional distribution of Hg 1-x Cd x Te epilayers 366
    4.6.4 Using infrared transmission spectra to determine the parameters of a HgCdTe/CdTe/GaAs multilayer structure grown by MBE 373
    References 379
    5 Transport Properties 385
    5.1 Carrier Concentration and the Fermi Level 385
    5.1.1 Carrier statistical laws .385 Intrinsic carrier concentration n 387
    5.1.2 The carrier concentration and the Fermi level for compensated semiconductors 399
    5.2 Conductivity and Mobility 410
    5.2.1 The Boltzmann equation and conductivity 410
    5.2.2 Experimental results of the electron mobility of Hg 1-x Cd x Te 416
    5.2.3 An approximate analytic expression for the electron mobility of n-type Hg 1-x Cd x Te 425
    5.2.4 An expression for the hole mobility of p-Hg 1-x Cd x Te 428
    5.3 Transport Properties in Magnetic Field 430
    5.3.1 Conductivity tensor 430
    5.3.2 Hall effect 436
    5.3.3 Magneto-resistance effect 441
    5.3.4 Magneto-transport experimental methods 445
    5.4 Mobility Spectrum in a Multi-carrier System 448
    5.4.1 The conductivity tensor of a multi-carrier System 448
    5.4.2 Multi-carrier fitting procedure 452
    5.4.3 Mobility spectrum analysis 456
    5.4.4 Quantitative mobility spectrum analysis 459
    5.5 Quantum Effects 470
    5.5.1 Magneto-resistance oscillation 470
    5.5.2 The longitudinal magneto-resistance oscillations of n-InSb 478
    5.5.3 The magneto-resistance oscillations in n-Hg 1-x Cd x Te 487
    5.6 Hot Electron Effects 492
    5.6.1 Hot electrons 492
    5.6.2 Hot electron effects in HgCdTe 495
    References 502
    6 Lattice Vibrations 507
    6.1 Phonon Spectra 507
    6.1.1 Monatomic linear chain 507
    6.1.2 Phonon dispersion measurement techniques 511
    6.1.3 Theoretical calculations of the phonon spectra 514
    6.2 Reflection Spectra 528
    6.2.1 Two-mode model of lattice vibrations 528
    6.2.2 Multi-mode model of lattice vibration 531
    6.2.3 Plasmon oscillation-LO phonon coupling effect 537
    6.2.4 HgCdTe far-infrared optical constant 543
    6.3 Transmission Spectra 546
    6.3.1 Far-infrared transmission spectra 546
    6.3.2 The two-phonon process 549
    6.3.3 Low-frequency absorption band of Hg 1-x Cd x Te alloys 553
    6.3.4 Characteristic estimation of phonon spectra 557
    6.4 Phonon Raman Scattering 559
    6.4.1 Polarizability 559
    6.4.2 Scattering cross-section 568
    6.4.3 Application of selection rules 578
    6.4.4 Raman scattering in HgCdTe 588
    Reference 595
    Index 599



    Vorwort

    Preface

    The physics of narrow-gap semiconductors is an important branch of semiconductor science. Research into this branch focuses on a specific category of semiconductor materials which have narrow forbidden band gaps. Past studies on this specific category of semiconductor materials have revealed not only general physical principles applicable to all semiconductor technology, but also those unique characteristics originating from the narrow band gaps, and therefore have significantly contributed to science and technology. Historically, developments of narrow-gap semiconductor physics have been closely related to the development of the science and technology of infrared optical electronics as narrow-gap semiconductors have played a vital role in the field of infrared-radiation detectors and emitters, and other high speed devices. The present book is dedicated to the study of narrow-gap semiconductors and their applications. It is expected that the present first volume will be valuable to not only the fundamental science of narrow-gap semiconductors but also to the technology of infrared optical electronics.

    There have been several books published in this field over the past few decades. In 1977, a British scientist, D.R. Lovett, published a book Semimetals and Narrow-Band Gap Semiconductors (Pion Limited, London). Later, German scientists, R. Dornhaus and G. Nimtz, published a comprehensive review article in 1978, whose second edition, entitled, The Properties and Applications of the HgCdTe Alloy System, in Narrow Gap Semiconductors, was reprinted by Springer in 1983 (Springer Tracts in Modern Physics, Vol. 98, p. 119). These two documents included systematic discussions of the physical properties of narrow-gap semiconductors and are still important references of the field. In 1980, the 18th volume of the series Semiconductors and Semimetals (edited by R.K. Willardson and Albert C. Beer) in which very useful reviews were collected, was dedicated to HgCdTe semiconductor alloys and devices. In 1991, a Chinese scientist, Prof. D.Y. Tang published an important article, "Infrared Detectors of Narrow Gap Semiconductors" in the book Research and Progress of Semiconductor Devices (edited by S.W. Wang, Science Publish, Beijing, pp. 1-107), in which the fundamental principles driving HgCdTe-based infrared radiation detector technology were comprehensively discussed. In addition, a handbook, Properties of Narrow Gap Cadmium-Based Compounds (edited by P. Capper), was published in the United Kingdom in 1994. In this handbook, a number of research articles about the physical and the chemical properties of HgCdTe narrow-gap semiconductors were collected and various data and references about Cd-based semiconductors can be found.

    This book Narrow Gap Semiconductors is being divided into two volumes. The first volume is subtitled (Vol. I): Materials Physics and Fundamental Properties. The second volume subtitled, (Vol. II): Devices and Low-Dimensional Physics, will follow. Volume II will have the following table of contents:

    • Chapter 1 Introductio

    1.1 Brief Description of Volume I 1.2 Devices on Narrow Band Gap Systems References

    • Chapter 2 Impurities and Defects
    2.1 Conduction and Ionization Energy of Impurities and Defects 2.2 Shallow Impurities 2.3 Deep Levels 2.4 Resonant Defects States 2.5 Photoluminescence of Impurities and Defects References
    • Chapter 3 Recombination
    3.1 Recombination Mechanisms and Life Times 3.2 Auger Recombination 3.3 Shockley-Read Recombination 3.4 Radiative Recombination 3.5 Measurement of Minority Carrier Lifetimes 3.6Surface Recombination References
    • Chapter 4 Surface Two-Dimensional Electron Gases
    4.1 MIS Heterostructures 4.2 Theoretical Model of Subband Structures 4.3 Experimental Methods for Subband Structure Investigations 4.4 Dispersion Relations and Landau Levels 4.5 Surface Accumulation Layers 4.6 Surfaces and Interfaces References
    • Chapter 5 Superlattices and Quantum Wells
    5.1 Semiconductor Low Dimensional Structures 5.2 Band Structure Theory of Semiconductor Low Dimensional Structures 5.3 Magneto-Transport Theory in Two-Dimensional Systems 5.4 Experimental Results for HgTe/HgCdTe Superlattices and Quantum Wells References
    • Chapter 6 Device Physics
    6.1 HgCdTe Photoconductive Detectors 6.2 Photovoltaic Infrared Detectors 6.3 MIS Structure Infrared Detectors 6.4 Low-Dimensional Infrared Detectors 6.5 Low-Dimensional Semiconductor Infrared Lasers 6.6 Single-Photon Infrared Detectors References
    • Appendices: Index

    The present book ( Narrow Gap Semiconductors: (Vol. I): Materials Physics and Fundamental Properties) and the forthcoming book ( Narrow Gap Semiconductors (Vol. II): Devices and Low-Dimensional Physics) aim, in the two volumes, at characterizing a variety of narrow-gap semiconductor materials and revealing the intrinsic physical principles that govern their behavior. The discussions dedicated to narrow-gap semiconductors presented in this book evolved within the larger framework of semiconductor physics, in combination with the progresses in the specific field of narrow-gap semiconductor materials and devices. In particular, a unique property of this book is the more extensive collection of results than ever previously assembled of the research results deduced by Chinese scientists, including one author of this book. These results are integrated into the larger body of knowledge from the world literature. In organizing the book, special attention was paid to bridging the gap between basic physical principles and frontier research. This is achieved through extensive discussions of various aspects of the frontier theoretical and experimental scientific issues and connecting them to device related technology. It is expected that both the students and the researchers working in relevant fields will benefit from this book.

    The book was encouraged and advised by Prof. D.Y. Tang. One of the authors (J. Chu) is most grateful to Prof. D.Y. Tang's critical reading of the manuscript and invaluable suggestions and comments. The co-author (A. Sher) is indebted to Prof. A.-B. Chen for invaluable suggestions. The authors are also grateful to numerous students and colleagues who over the years have offered valuable support during the writing of this book. They are Drs.: Y. Chang, B. Li, Y.S. Gui, X.C. Zhang, S.L. Wang, Z.M. Huang, J. Shao, X. Lu, Y. Cai, K. Liu, L. He, M.A. Berding, and S. Krishnamurthy. We are indebted to Professor M.W. Müller for his careful reading of Chaps. 1-4 of the English manuscript. The electronic files of the whole camera ready manuscripts were edited by Dr. H. Shen and Dr. X. Lu.

    The research of one author's group (J. Chu) that is presented in this book was supported by the National Science Foundation of China, The Ministry of Science and Technology of the People's Republic of China, the Chinese Academy of Science, and the Science and Technology Commission of the Shanghai Municipality.

    Klappentext

    Microdevices: Physics and Fabrication Technologies

    Junhao Chu
    Arden Sher
    Physics     and     Properties     of     Narrow     Gap     Semiconductors

    Narrow gap semiconductors obey the general rules or semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.

    In this book, the authors o fter clear descriptions of crystal growth and the fundamental structure and properties of these materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. Physics and Properties of Narrow Gap Semiconductors helps readers to understand semiconductor physics and related areas of materials science and how they relate to advanced opto-electronic devices. A forthcoming book by these authors will focus on the device physics of these unique materials.


    ISBN 978-0-387-74743-9

    Register

    Index


    A

    ab initio calculation, 514
    absorption coefficient, 114, 200
    absorption edge, 197, 279
    absorption spectroscopy, 246
    accelerating crucible rotation technique (ACRT), 68
    acoustic branch, 510
    acoustics phonon scattering, 417
    ACRT-THM, 72
    adiabatic bond-charge model, 514, 522, 525
    Anderson model, 288
    atomic displacement (AD), 581
    Auger electron spectroscopy (AES), 100
    augmented plane-wave (APW), 152


    B

    band tail, 283
    Berstein-Moss factor, 276
    Bessel function, 429
    blackbody, 105
    - ideal blackbody, 105
    Bloch function, 151, 161
    Bloch theorem, 227
    Bohr magneton, 471
    Boltzmann constant, 43
    Boltzmann distribution, 411, 432
    Boltzmann equation, 410, 492
    Boltzmann gain-loss equation, 411
    Boltzmann transport equation, 328
    bond charge (BC), 522
    bonding coefficient, 515
    Born approximation, 425
    Born-Oppenheimer adiabatic approximation, 151
    Bose-Einstein factor, 276
    bowing term, 209
    Bragg angle, 116
    Bragg formula, 128
    Bridgman technique, 62
    Bridgman-Stockbarger technique, 62
    Brillouin zone, 2
    - first Brillouin zone, 22
    Brooks-Herring theory, 429
    Brout sum rule, 553, 557
    Burstein-Moss offset, 292


    C

    carrier density, 99
    carrier freeze-out, 477
    carrier lifetime, 1 carrier transport, 2
    Clapeyron equation, 26
    Clausius statement, 24
    complex dielectric function, 239
    compositional uniformity, 268
    conductivity, 410
    conductivity tensor, 430
    constant-Q technique, 513
    cooling rate, 88
    Coulomb coefficient, 515
    Coulomb interaction, 151, 523
    Coulomb potential, 151
    covalent binding, 155
    CPA, 421, 427
    crystal growth, 23
    crystal potential, 158
    crystal symmetry, 170
    cubic symmetry group, 172
    cut-off wavelength, 2
    CXT formula, 208, 252, 358, 425
    cystallography, 227
    Czochralski technique, 54


    D

    damping constant, 242
    Darwin interaction term, 164
    Debye length, 426
    density functional theory, 1

    density of states (DOS), 254, 557
    dielectric function, 239
    differential scanning calorimeter (DSC), 132
    diffusion coefficient, 30
    Dingle temperature, 473, 483
    Dirac relativistic formula, 157, 164
    dislocation density, 98, 125
    dispersion, 246
    double group, 176
    double-crystal diffraction curve, 118
    double-crystal measurement, 118
    double-crystals rocking curves (DCRC), 116
    double-layer heterojunction (DLHJ), 93
    drift velocity, 492, 502
    dynamic equilibrium, 32


    E

    effective donor concentration, 321
    effective electron mass, 1

    effective Lande factor, 471
    effective medium approximation (EMA) model, 315
    Ehrenfest equation, 27
    eigen function, 162
    eigen value, 162
    electron effective mass, 212
    electron mobility, 1

    electron-hole scattering, 417
    electron-phonon interaction, 206
    ellipsometric parameter, 113
    empirical pseudopotential, 152
    energy band parameter, 195
    energy band structure, 152
    energy gap, 197
    energy-dispersive x-ray spectroscopy, 128
    etch pits density (EPD), 121
    eutectic region, 38
    Ewald sphere, 102
    exciton-phonon interaction, 283
    exponential absorption region, 247


    F

    far infrared Fourier transform spectrometer (FTIR), 339

    far-infrared (FIR), 546
    Fermi distribution, 387, 411, 432
    Fermi energy level, 388
    Fermi level, 385
    Fermi-Dirac distribution, 385, 425
    Fermi-Dirac integral, 389, 495
    Fermi-Dirac statistic, 385
    Fermion particle, 411

    ferroelectric thin film, 10
    Fick's laws, 29
    Fick's first law, 70
    Finkman formula, 375
    FIR transmission, 546
    Fixed Polarizer, Rotating Polarizer, and Rotating Analyzer (FPRPRA), 303

    float zone method, 72
    Fourier coefficient, 300
    Fourier transform, 151
    Frankel defect, 138
    Franz-Keldysh effect, 252

    free carrier absorption, 247, 328

    free carrier absorption region, 247

    freezing process, 48
    Fresnel equation, 113
    Fröhlich interaction, 419, 581

    full width at half maximum (FWHM), 116


    G

    Gibbs free energy, 26
    Golden Rule, 277
    gradient of temperature, 29
    graphical method, 399
    Green's function method, 152


    H

    half-melt technique, 68
    half-melting, 62
    Hall coefficient, 395, 436
    Hall Effect, 424
    Hall factor, 437
    Hall mobility, 416, 470
    Hall resistivity, 436
    Hall voltage, 436
    Hall-effect measurement, 93
    Hamiltonian, 164
    Hartree-Fock approximation, 151
    heavy hole band, 185, 265
    heavy hole effective mass, 195, 216
    Helmholtz free energy, 25
    Hg interstitial, 136
    Hg vacancy, 141
    Hg-rich solvent LPE, 92
    HgTe-rich solution, 93
    high-frequency dielectric constant, 269
    hot electron, 496
    hot electron effect, 496
    hot phonon, 500
    HPTB, 421
    HSC formula, 252
    Hybrid Mixed Conduction Analysis (HMCA), 459
    hybrid psudopotential-tight-binding theory (HPTB), 1, 421


    I

    impurity energy level, 283
    inclusion, 131
    indirect interband transition, 266
    inelastic neutron scattering (INS), 511
    inelastic X-ray scattering (IXS), 511
    infrared absorption spectra, 357
    Infrared detector, 2

    infrared focal plane arrays (IRFPAs), 76
    infrared spectroscopic ellipsometry, 305
    infrared transmission spectra, 366
    in-situ doping, 99
    interband transition, 197
    interference fringe method, 306
    interference matrix method, 374
    interlayer force constant method, 553, 557
    internal energy, 25
    intrinsic absorption band, 285
    intrinsic absorption region, 247
    intrinsic optical absorption, 197
    intrinsic semiconductor, 442
    ion implantation, 296
    ion-BC interaction, 523
    ionization, 404
    irreducible representation, 172
    isobaric process, 25
    isothermal process, 25
    isovolumetric process, 25
    iterative approximation method, 458


    J

    Jacobi iterative procedure, 459
    joint density of states, 264
    Jones matrix, 298


    K

    k.p formalism, 161
    k.p interaction, 154
    k.p method, 234
    k.p perturbation, 161
    k.p perturbation method, 152
    k.P perturbation theory, 2
    Kane model, 285, 474
    Kane region, 285
    Kane theory, 154
    Keating potential, 525
    Kelvin-Plank statement, 24
    KKR method, 153
    Kramers-Kronig (KK) relation, 242, 309, 562
    Kucera formula, 376


    L

    Landau cyclotron radius, 496
    Landau energy band, 471
    Landau level, 455, 470
    Landau sub-band, 470, 478
    lattice constant, 19, 155
    Lattice Vibration, 515
    lattice vibration characteristic, 3
    lattice-matched alloy, 20
    lattice-mismatched alloy, 20
    Laue diffraction equation, 101
    law of mass action, 400, 403
    light hole band, 265
    linearized muffin tin approximation (LMTO), 138
    Liquid Phase Epitaxy, 6

    liquid phase epitaxy (LPE), 6
    - horizontal sliding LPE, 79
    - tipping LPE, 77
    - vertical dipping LPE, 88
    liquidus line, 41
    longitudinal compositional distribution, 366
    longitudinal magneto-resistance, 443, 475, 477, 478, 482, 486, 488, 489, 491
    longitudinal optical branch (LO), 519
    loop glue method, 267
    Lorentz force, 347
    Lorentz force law, 412, 436
    Lorentzian oscillator, 529
    low-frequency absorption band, 554


    M

    Madelung constant, 525
    magnetic freeze-out phenomena, 451
    magnetic plasma reflection, 197
    magneto-optic effect, 3

    magneto-optical experiment, 199
    magneto-resistance effect, 441
    magneto-resistance oscillation, 470
    magneto-transport, 445
    many-body problem, 151
    mass-transfer equilibrium, 32
    mass-velocity interaction term, 164
    Maxwell-Boltzmann distribution, 433, 496
    Maxwell-Boltzmann distribution function, 387
    MBE growth, 97
    mean free path, 416
    Metal Organic Chemical Vapor Deposition (MOCVD), 6, 76
    metallographic microscopy, 128
    micro-photoluminescence, 595
    mixed-conduction approximation, 452
    Mobility spectrum analysis (MSA), 456
    molecular beam epitaxy (MBE), 6, 95
    Molecular Beam Epitaxy (MBE), 95
    molecular CPA (MCP A), 284
    momentum matrix element, 195, 220
    momentum relaxation time, 413, 492, 502
    momentum-energy conservation laws, 511
    monatomic chain, 507
    Moss-Burstein shift (MB effect), 317
    multi-carrier fitting procedure (MCF), 452
    multi-carrier system, 448
    multi-mode model of lattice vibration, 531
    multiphase equilibrium, 33


    N

    Narrow gap semiconductor, 1
    Nathan's expression, 292
    native point defect, 136
    Newton equation, 507
    non-parabolic band, 185
    normal freezing, 48


    O

    occupation number, 430
    Ohm's law, 493
    optical branch, 510
    optical constant, 114, 296
    optical phonon scattering, 417
    optical property, 3

    orthogonalized plane-wave (OPW), 152
    orthonormal local orbital (OLO), 276


    P

    Pauli exclusion principle, 385
    Peltier effect, 59
    phase diagram, 34
    phase diagram of HgTe-CdTe, 40
    phase diagram of InSb, 59
    phase equilibrium, 32
    phase transformation, 32
    phonon absorption region, 247
    phonon dispersion, 510
    phonon spectra, 514
    phonon-assisted absorption, 275
    photoconductive, 198
    photoconductive device, 1

    photo-electronic excitation, 2

    photon-plasmon coupling, 540
    photovoltaic, 198
    photovoltaic device, 1

    piezoelectric scattering, 417
    Planck equation, 105
    plasmon oscillation, 537
    p-n junction, 294
    polariton, 537
    polarizability, 559
    precipitated phase, 130
    primitive lattice vector, 227
    Proportional Integral Derivative (PID), 56
    pseudo-binary semiconductor, 3

    pulling technique, 54


    Q

    quantitative mobility spectrum analysis (QMSA), 459
    quantum effect, 470
    quantum Hall effect, 452
    quantum limit, 476, 477
    quasi-elastic approximation, 507


    R

    RAE (rotating analyzer ellipsometer), 299
    Raleigh coefficient, 31
    Raleigh constant, 30
    Raman scattering, 559, 587
    - micro-Raman scattering, 595
    Raman tensor, 579
    reciprocal lattice vector, 102, 170, 229
    recursion method, 374
    reduced-conductivity-tensor scheme (RCT), 452
    reflectance spectroscopy, 246
    reflected high-energy electron diffraction (RHEED), 99
    Reflection Spectra, 528
    refraction index, 245
    refractive index, 246
    relaxation time, 328
    residual impurities, 421
    RHEED, 97
    rigid-ion model, 514
    rocking curve, 118, 124
    root mean square (rms), 365
    rotating analyzer and polarizer (RAP), 302
    Rutherford backscattering spectroscopy (RBS), 135


    S

    sample-glue-substrate structure, 269
    scanning electron microscopy (SEM), 127
    scanning ion-beam mass
    spectroscopy (SIMS), 126
    scattering cross section, 568
    Schrödinger equation, 151, 161, 386
    SdH effect, 488
    second order perturbation, 188
    second order phase transition, 27
    secondary ion mass spectroscopy (SIMS), 100
    segregation coefficient, 42

    - effective segregation coefficient, 57
    selection rule, 170, 578
    shell model, 514, 515
    Shockley's graphical method, 400
    short range correlation, 158
    Shubnikov-de Haas (SdH) effect, 451
    Shubnikov-de Haas (SdH)oscillation, 478
    SIMS (secondary ion mass
    spectroscopy), 366
    single group, 175
    S-L coupling, 166
    solid re-crystallization, 54
    Solid state re-crystallizing, 72
    solidus phase line, 41
    spectroscopic ellipsometry, 296
    - in situ spectroscopic ellipsometry, 111
    spin splitting, 475, 489
    spin-orbit interaction, 154
    spin-orbit interaction term, 164
    spin-orbit split band, 185
    spin-orbit split-off band, 158
    spin-orbit splitting, 195, 216
    square root rule, 287, 296
    state population distribution, 430
    Stefan-Boltzmann law, 105
    structure factor, 116
    Subnikov-de Hass effect, 197
    super-cooling, 28
    - compositional super-cooling, 52
    super-saturation, 28
    surface electric field (SF), 581
    surface morphology, 127, 128
    Szigeti charge, 518


    T

    Te interstitial, 136
    Te solvent, 54
    Te solvent technique, 68
    Te vacancy, 141
    Te-rich solution, 91
    ternary semiconductor, 209
    the thermodynamic degrees of freedom, 33
    the third law of thermodynamics, 24
    thermal equilibrium, 32
    thermal-neutron-absorption crosssection, 513
    thermodynamics, 23
    tight-binding, 152
    transition matrix element, 255
    transition probability, 277
    transmission electron microscopy (TEM), 126
    transmission spectra, 546
    transport process, 3 transverse compositional uniformity, 361
    transverse magneto-resistance, 472, 473, 475, 478, 489, 491
    transverse optical branch (TO), 519
    traveling hot-zone method (THM), 72
    two-mode model of lattice vibrations, 528
    two-phonon process, 549


    U

    ultraviolet photo-electronic spectroscopy (UPS), 100
    Urbach absorption law, 367
    Urbach exponential rule, 280
    Urbach rule, 284


    V

    Van der Pauw configuration, 462, 465
    Van der Pauw method, 446, 462, 465, 469
    vertical LPE method (VLPE), 92
    virtual crystal approximation(VCA), 158, 208
    void, 128


    W

    Wannier function, 152
    weighing technique, 58
    Wien's Law, 105
    Wigner-Seitz primitive cell, 228


    X

    X-ray backscattering spectrometer, 511
    X-ray double-crystal diffraction, 116
    X-ray electron spectroscopy (XPS), 100
    x-ray topological morphology (XRT), 127


    Z

    zincblende cubic structure, 19
    zone melting, 48



    Autor

    Junhao Chu

    He is a member of CAS, directs the National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, and is at the East China Normal University.

    Arden Sher

    He is retired from SRI International and Stanford University.