Inhaltsverzeichnis

Klappentext

Reynaert • Steyaert

RF Power Amplifiers for Mobile Communications ACSP

RF Power Amplifiers for Mobile Communications fits in the quest for fully integrated CMOS transceivers. The book tackles both high efficiency and high linearity PA design in low-voltage CMOS, and has a strong emphasis on theory, design and implementation. The book is conceived as a design guide for those actively involved in the design of CMOS wireless transceivers

RF Power Amplifiers for Mobile Communications starts from the basic theory of power amplification from the viewpoint of CMOS integration. The design of switching RF power amplifiers in CMOS is explored and CMOS PA design at low supply voltage using parallel amplification is discussed. Combining both efficiency and linearity is one of the major issues in CMOS PA design for wireless and mobile communications and is subsequently tackled. Different linearization techniques and approaches are discussed and polar modulation is clarified in greater detail finally, two CMOS PA implementations are thoroughly covered.

RF Power Amplifiers for Mobile Communications offers the reader an intuitive insight in Power Amplification as well as the necessary mathematical background. The book is essential reading for RF design engineers and researchers in the field and is suitable as a text book for an advanced course on the subject.

ISBN 1-4020-5116-6

Register

Index

A

Active load pull, 168
Adjacent channel power, 217
AM-AM distortion, 149, 187, 202
AM-PM distortion, 149, 187, 202
AM-signal, 10
Amplitude linearity, 26
Amplitude modulator, 137, 140, 189
- linear, 142
- switching, 146
Average efficiency, 23

B

Backoff, 61
Bal un, 118
Baseband filter, 180
Bluetooth, 215
Bondwires, 102

C

CDF, 16
CDMA, 25, 59
Cheirex, 62
Class A, 30
- over-driven, 40
- saturated, 40
Class AB, 33
Class B, 33, 39
Class BE, 92
Class C, 33
Class CE, 92
Class D
- harmonic, 46
- switching, 49
Class E, 51, 65
Class E
- design space, 81
Class E
- in CMOS, 65
Class F, 44
- inverted, 47
Class G, 61
Class H, 61
Class S, 146
Clipping, 40
CMOS, 2
- RF, 3
- technology scaling, 84
Collector efficiency, 20
Complex envelope, 10
Compression, 61
Conduction angle, 33
Constant envelope signal, 13
Constellation
- diagram. 12
- point, 12
Conversion efficiency, 21
Crest factor, 19
Cumulative density function, 16

D

DC-feed inductance, 76
Decoupling, 102
Delay compensation, 162
distortion, 157
Device stacking, 87
Differential circuit, 105
Differential delay, 157, 188
Digital
- linearization, 170
- modulation, 12
Distortion, 149
- AM-AM, 149, 187, 202
- AM-PM, 149, 187, 202
differential delay, 157, 188
- envelope filtering, 158, 189, 209
- feedforward, 151
- injection of the phase signal, 166
- memory effects, 150
- nonlinear drain-bulk capacitance, 157
- nonlinear on-resistance, 155
- PM-AM , 150
- PM-PM, 150
Doherty amplifier, 62, 129, 169
Drain capacitance, 81
- efficiency, 20
Drain-bulk capacitance, 157

E

Eddy currents, 99
EDGE, 178
Efficiency, 20
- average, 23
- collector, 20
- conversion, 21
- drain, 20
- improvement, 60, 169
- of modulated signals, 23
- overall. 22
- power added, 22
Envelope
- bandwidth. 159
elimination and restoration, 137
- Filtering, 158, 189, 209
- signal, 10
- variations, 14
- KVM, 184

F

FDMA, 25
Feedback polar, 167
Feedforward, 151
Fixed envelope output power, 19
Foucault currents, 99
Full digital linearization, 170

G

Gain, 20
Gate capacitance, 80
Group delay, 163
GSM, 178

H

Hard switching, 49
Harmonie trap, 40
- tuning, 44
Hot carriers, 56, 80
- electrons, 56, 80

I

Impedance
- matching, 111
- transformation, 111
ln-phase signal, 10
Inductor, 97
- loss, 27
- slab, 99
Input power, 20
Integrated inductor, 97
Inter-symbol interference, 181
Inverted class F, 47
ISI, 181
ISM, 215

J

Junction breakdown, 56

K

Khan transmitter, 137
Knee region, 32

L

L-match, I 11
Lattice-type LC balun, 118, 167
Linear amplitude modulator, 142, 196
Linearity, 26
- amplitude, 26
- improvement, 62, 166
- phase, 26
Linearization, 62, 135
- back-off, 61
- digital, 170
- outphasing, 62
- polar, 135
Load
- mismatch, 207
- pull, 168
Lyapunov equation, 74

M

Maximum output power, 31
Memory effects, 150
Modulated bandpass signal, 10
Modulation, 10
Moore's Law, 2

N

NMOS switch, 79
Non-constant envelope signal, 14
Nonlinear drain-bulk capacitance, 157
- on-resislance, 155

O

On-chip inductor, 97
On-resistance. 79, 155
Outphasing, 62
Output power, 16
- back off. 61
- capability, 31
- lived envelope, 19
- fundamental, 18
- instantaneous, 17
- peak envelope, 19
Over-driven amplifier, 40
Overall efficiency, 22
Oxide breakdown, 56

P

Packaging, 102
PAE, 22
PAPR, 19
PDF, 16
Peak envelope output power, 19
- output power, 19
- to average power ratio, 19
Phase linearity, 26
Phase signal, 10
- bandwidth, 159
- injection, 166
PM-AM distortion, 150
PM-PM distortion, 150
Polar
- feedback, 167
- linearization, 63
- modulation, 63, 135, 177, 186
digital, 172
distortion, 149, 187
Power added efficiency, 22
Power
- amplifier classification, 30
- combining network, 118, 167, 218
- control, 25, 129, 218
- gain, 20
Predistortion, 166
Probability density function, 16
- of the average output power, 25
Proximity effect, 100
Pseudo differential, 106
Pulse shaping, 180
Punch-through, 56
Push-pull amplifier, 40

Q

Quadrature signal, 10
Quality factor, 27

R

Reduced conduction angle, 33
Reliability, 55, 80
RF CMOS, 3
RF D/A power converter, 131, 171
RF phase signal, 137
bandwidth, 159
RMS, 18

S

Saturated amplifier, 40
Self-resonance, 98
Shunt capacitance, 81
Skin depth, 99
Skin effect, 99
Slab inductor, 99
SM A, 199
Soft switching, 53
Spectral asymmetry, 188
Spectral mask, 183, 204
Stacked devices, 87, 118
State-space model, 69
Steady-state solution, 71
Supply voltage modulator, 137
Switching amplifiers, 48
Switching amplitude modulator, 146
Switching class D, 49

T

TDMA, 25
Technology scaling, 2, 84
Time delay, 163
Time dependent dielectric breakdown, 56
Transniissionline tuning, 46
Tuned networks, 28
Two-tone signal, II, 159

U

UMTS, 59, 178

V

VSWR, 206

Z

Zero voltage switching, 53
ZVS, 53

Vorwort

This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.

Autoren

Prof. Michiel Steyaert received his Ph.D. degree in electronics from the Katholieke Universiteit Leuven (KUL) in June 1987. In 1988 he was an associated assistant professor at the U.C.L.A. From 1989 he joined the ESAT-MICAS group at the KUL, were he is now a Full Professor. His current research interests are in analog integrated circuits for high-frequency telecommunication systems and high performance analog signal processing. He authored or co-authored over 250 papers and co-authored over 5 books. He received the 1990 European Solid-State Circuits Conference Best Paper Award, the 1995 and 1997 ISSCC Evening Session Award, the 1999 IEEE Circuit and Systems Society Guillemin-Cauer Award and the 1991 NFWO Alcatel-Bell-Telephone award for innovative work in integrated circuits for telecommunications.