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TABLE OF CONTENTS
PREFACE VII
Objectives vii
Topics and use of the book viii
Acknowledgements ix
1. AN ENVIRONMENT OF CHALLENGES 1
1.1 Overview 1
1.2 A history of modern electronic devices 2
1.3 An issue of scale 7
1.4 Defining electronic materials 11
1.5 Purity 13
1.6 Performance 14
1.7 Summary points 17
1.8 Homework problems 18
1.9 Suggested readings & references 19
2. THE PHYSICS OF SOLIDS 21
2.1 Electronic band structures of solids 21
2.1.1 Free electrons in solids 23
2.1.2 Free electrons in a periodic potential 24
2.1.3 Nearly free electrons 25
2.1.4 Energy vs. momentum in 3 d 28
2.1.5 Electrons and holes 32
2.1.6 Direct and indirect semiconductors 35
2.1.7 Effective mass 37
2.1.8 Density of states 38
2.2 Intrinsic and extrinsic semiconductors 40
2.2.1 Intrinsic semiconductors 40
2.2.2 Extrinsic semiconductors 42
2.3 Properties and the band structure 44
2.3.1 Resistance, capacitance, and inductance 44
2.3.2 Optical properties 53
2.3.3 Thermal properties 54
2.4 Quantum wells and confined carriers 59
2.5 Summary points 67
2.6 Homework 69
2.7 Suggested readings & references 71
3. OVERVIEW OF ELECTRONIC DEVICES 73
3.1 Diffusion and drift of carriers 74
3.1.1 Chemical potential 74
3.1.2 Carrier motion in a chemical potential gradient 74
3.2 Simple diodes 75
3.2.1 The junction contact potential 77
3.2.2 Biased junctions 81
3.2.3 Non-ideal diode behaviors 88
3.3 Schottky barriers and ohmic contacts 96
3.3.1 Ideal metal/semiconductor junctions 96
3.3.2 Real schottky diodes 101
3.4 Semiconductor heterojunctions 102
3.4.1 Heterojunctions at equilibrium 103
3.4.2 Heterojunctions as diodes 109
3.5 Transistors 111
3.5.1 Bipolar junction transistors 111
3.5.2 Field-effect transistors 114
3.6 Light-emitting devices 119
3.6.1 Light-emitting diodes 120
3.6.2 Laser diodes 124
3.7 Summary 134
3.8 Homework problems 136
3.9 Suggested readings & references 139
4. ASPECTS OF MATERIALS SCIENCE 141
4.1 Structures of materials 141
4.1.1 Crystal lattices 142
4.1.2 The reciprocal lattice 148
4.2 Basic thermodynamics of materials 151
4.3 Phase diagrams 155
4.4 Kinetics 163
4.4.1 Reaction kinetics 164
4.4.2 Nucleation 166
4.4.3 Atomic transport 170
4.5 Organic molecules 172
4.6 Applications 178
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INDEX
Aab-initio method, 477
abnormal glow discharge, 545
adhesion, 427, 445, 455, 485-88, 553, 559-68
adsorbate, 462, 463, 466, 596, 603
adsorption, 117, 455, 459, 461-68, 485, 488-90, 492, 494, 496, 518
alkane, 172, 431
alkene, 172
alkoxy group, 431
alloy
- order parameter, 248
alloy scattering, 240, 267, 281
alloys
- binary, 241, 250, 259-61, 283
- isostructural, 239, 280
- isovalent, 239-41, 280
- metastable, 268-72
- miscibility, 109, 178, 245, 255, 256, 276, 344, 556
- pseudobinary, 162, 241, 242, 244, 246-48, 250, 252, 253, 255-61, 266, 280, 283, 596
- pseudoternary, 261
- quaternary, 163, 249, 250, 260, 261, 280
- Si-Ge, 214, 240, 241, 252, 267, 275, 283, 390
- ternary, 238, 239, 241, 242
amorphous covalent network, 364, 372
anion, 51, 105, 202-5, 210, 214, 221, 222, 232, 233, 239, 244, 259, 261, 300, 339, 36...
antibonding orbital, 199, 204
antiphase boundary, 340
antisite defects, 290, 300, 302, 315, 560
aromatic group, 175
arsine, 373, 514, 574, 577, 587
α-sexithienyl, 414
associative desorption, 464
atomic layer deposition, 573, 594-97
attempt frequency, 164, 168, 171, 464, 470
Auger electron spectroscopy (AES), 198
autocompensation, 302, 305, 308
Bband offset, 66, 105, 113, 205, 214, 265, 266, 268, 279, 281, 390
band tails, 360, 368, 369, 375, 377, 382
beam equivalent pressure, 518
Bloch wave, 37, 38, 209, 234, 256, 361, 401, 406
Boltzmann distribution, 34, 85
bonding orbital, 199
boundary layer, 576, 582-84, 604, 606
bowing parameter, 255, 259, 261
Bragg condition, 523
Brillouin zone, 28-30, 70, 148, 151
bubbler, 585
built in voltage, 78, 80, 373
bulk modulus, 225, 314, 316, 324, 481
Ccapacitance, 10, 44, 48, 73, 81, 116, 275, 294, 383
capture radius, 558
carbanion, 358, 404-10, 421, 423, 429, 441, 447, 448
carbocation, 358, 404-10, 421, 423, 429, 441, 447, 448
carbon nanotubes, 416
carrier
- diffusion length, 83, 90, 279, 343
- intrinsic concentration, 40, 42, 78, 84, 85, 308
- majority, 44, 67, 81, 83-5, 88, 89, 98, 100, 115, 116, 135, 290, 293, 341, 349, 386...
- minority, 35, 44, 69, 81-93, 100, 110-14, 121, 126, 137, 273, 279, 290, 293, 342, 3...
cation, 51, 105, 134, 196, 202-5, 210, 211, 214, 221, 232, 233, 239, 244, 253, 259, 2...
charge-injection damage, 418
chemical potential, 74-7, 82, 96, 98, 108, 134, 152-55, 163, 172, 189, 245, 279
chemical splitting, 202-5, 216, 217, 220, 221, 224, 258, 259, 297, 299, 300, 318
chemical vapor deposition (CVD), 166, 169, 271, 343, 366, 389, 464, 488, 561, 573-606
- plasma-enhanced, 365, 372, 555
chemical vapor transport, 598
Child Langmuir law, 550
chromophores, 431
classical nucleation theory, 468
closed-space vapor transport, 585
coalescence, 336, 459, 468-70, 473
coarsening, 472, 494
cohesive energy, 153, 201, 234, 516
cold wall reactor, 580
collision cascade, 527, 530-34, 555, 565
common anion rule, 134, 196, 205, 214, 232, 233
Compton scattering theory, 538
conduction band, 32, 34, 35, 40, 41, 43, 53, 60, 64, 66, 69, 70, 75, 92, 95, 97, 105,...
conjugated, 396, 397, 399, 402, 429, 431, 438-41, 446
contact angle, 482, 483, 497, 501
copolymer, 432
copper phthalocyanine, 418
Coulomb blockade, 385
cracking source, 464, 494, 564
critical thickness, 321-27, 329-31, 333, 335-37, 350, 354
cross section, 10, 121-23, 254, 294, 460, 499, 547, 548, 583
crucible, 183, 184, 509-12, 514, 515, 564
cryoshrouds, 507
CuAu structure, 280
current
- diffusion, 48, 75, 82, 84-6, 98, 110
- drift, 48, 75, 79, 82-6
- forward, 89
- reverse saturation, 84, 87, 99
Czochralski method, 4, 185, 192
Ddangling bonds, 101, 299, 300, 318, 339-44, 349, 354, 358, 362-69, 379, 386, 389, 40...
dark space, 549, 550
dc sputtering, 541
Debye frequency, 50
Debye temperature, 58
deep level, 292
defect clusters, 167, 191, 309, 362, 380, 464, 465, 468-72, 496, 513, 555-58, 592
density of states, 38-42, 47, 53, 67-70, 127, 129, 131, 134, 225
density-functional theory, 474
denuded zone, 471, 501
depletion width, 79-81, 90-4, 101, 108, 137
desorption, 455, 459, 462-71, 485, 488-90, 492, 494, 496, 500, 512, 513, 518, 555, 57...
diamond, 147, 201, 217, 262
dielectric
- gate, 115, 118, 341
dielectric constant, 10, 15, 45, 48-51, 53, 79, 122, 129, 132, 133, 136, 138, 296, 29...
diffusion
- interstitial, 170
diffusivity, 45, 47, 75, 83, 170, 172, 190, 302, 308-11, 349, 369, 438, 457, 470, 477...
dilutant gas, 343, 599
diode
- laser, 5, 59, 66, 73, 109, 124-35, 237, 272, 320, 342, 343, 482, 525
- light emitting, 5, 120, 121, 123, 124, 133
- organic light emitting, 443, 452
- Zener, 91
diodes, 2, 4, 77, 81, 84-91, 93, 95, 96, 100, 101, 113, 115, 119
direct gap, 37, 43, 120, 212, 224, 231, 233, 234, 258-60, 346, 377
direct-write method, 443
disilane, 366, 378, 603
dislocation- 60°, 328
- core energy, 314, 324
- edge, 311-24, 328, 341, 350, 354
- line energy, 314, 324, 328, 333
- loop, 313, 317, 331-34, 350, 560
- misfit, 267, 322, 326-28, 330-34, 336, 341, 350, 354
- multiplication, 331, 334
- network, 322, 326, 327, 335, 336, 350
- partial, 315, 333, 338, 339, 354
- perfect, 314, 315, 336
- pinning points, 334
- screw, 311-16, 320, 324, 348, 349, 354
- threading, 331, 336, 337, 350
dispersion, 55, 70, 220-22, 224, 232, 341, 372, 375, 510
dispersion relation
- electrons, 70
- phonons, 55, 68, 69
dispersive transport, 371, 389
displacement cascade, 539, 556, 559, 565
distributed Bragg reflector (DBR), 132, 133, 482
dopant
- acceptor, 43, 309
donor, 76
dye molecules, 403, 408, 414, 420-24, 449
Eeffective mass, 37, 38, 42, 46, 47, 67, 69, 70, 93, 122, 137, 212, 221, 230, 240, 26...
effusion cell, 509-15, 532, 564, 567, 599
electrode potential, 539, 552, 553
electromigration, 10, 568
electron affinity, 97, 103, 104, 106, 137, 347, 352, 429, 431
electron beam evaporator, 514, 515, 564
electron correlation, 399, 400, 410
electron density map, 221
electron gas, 109, 111
electron impact emission
- spectroscopy, 518
electron transport layers, 408
emitter injection efficiency, 113, 273, 281
empirical tight-binding, 211
endothermic, 163, 164, 178, 182, 302, 470, 489, 598, 604, 607
energy gap, 3, 4, 34, 37, 42, 53, 67, 69, 84, 92, 93, 95, 99, 103-7, 109, 110
- broken gap, 104, 134, 137
- straddling, 103
enhancement mode, 435
enthalpy, 155, 303, 587
entropy, 74, 154-56, 164, 178, 189, 245, 247, 249, 250, 252-54, 283, 290, 303, 304, 3...
- configurational, 178, 245, 247, 252, 303
- vibrational, 303, 304
epitaxial thickness, 485
epitaxy, 103, 269, 272, 458, 483, 485, 496, 503, 514, 564, 580
equilibrium, 34, 56, 59, 74, 78, 81, 83, 85, 86, 103, 105, 107, 118, 121
evaporation, 169, 271, 414, 415, 459, 464, 467, 492, 499, 505-8, 514-16
Ewald sphere, 24, 151, 520, 523
- construction, 24, 520
exciton, 122, 403, 405, 410, 421-23, 426, 440, 448
exothermic, 163, 164, 167, 178, 182, 307, 457, 470, 489, 596, 598, 599, 604, 607
extrinsic defects, 290
FFermi energy, 32-4, 37, 41, 42, 44, 46, 47, 53, 59, 69, 74, 79, 85, 95, 96, 118
Fermi function, 33, 34, 37, 40, 43, 67, 69, 303, 318 flow rate, 575, 577, 587, 604 fl...
Förster radius, 422, 423, 447
Fourier transform, 23, 26, 148
Frank-Read source, 334
Frank-Van der Merwe growth, 483
free electrons, 15, 25, 40, 44, 58, 120, 402 free energy, 155, 178, 179, 245, 248, 24...
Frenkel defects, 290 functional group, 175, 177, 190, 396, 408, 429, 435
Ggas velocity, 582, 583, 604, 606
generation, 34, 37, 93, 95, 169, 382, 385, 387, 405, 411, 442, 604
- optical, 34, 35, 390
- thermal, 34, 35
gerade, 199
glide plane, 325, 328, 329, 335, 354
glow discharge, 505, 513, 520, 527, 539, 542-45, 547-50, 552, 561, 565, 589, 590
glow discharge optical spectroscopy, 520
graded base, 274
grain boundary, 486
growth stresses, 487
Gunn diode, 228
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