Index

(Zn, Cd)0, 13
(Zn, Mg)0, 13

A

absorption edge, fundamental, 111
- MgZnO, 117, 118
- temperature, 112-114, 116
air mass (AM), 250
Aluminium concentration, 135
angular distribution function, 287
anisotropy of conductivity, 48
atomic layer deposition, 293

B

band alignment
- amorphous interface, 164
- II-VI semiconductors, 13
- ZnO/(Zn, Mg)0, 13, 14
band gap, 274-276
- shrinkage at high doping level, 276
band gap engineering, 13
band gap, fundamental, 109, 111
- MgZnO, 117, 118
- temperature, 112-114, 116
band-to-band transitions, 108, 109
Bose-Einstein model, 96, 112
- parameters, 97, 113
bowing, 117
brass, 21
Burstein-Moss effect, 274-276

C

cathodoluminescence, 26
Cauchy formula, 105
- parameters, 107, 108
CdO, 5
CIGS solar cells
CVD ZnO buffer layers, 289
collision cascade, 192
combinatorial PLD, 347
conduction band offset, 126
conductivity of ZnO single crystals, 36
critical points, 108
- parameters, 109
- model dielectric function, 87
crystal structure, 81
- rocksalt, 83
- wurtzite, 82
crystal-field splitting, 110, 112
crystallographic structure, 4
Cu(In, Ga)Se₂
Cu depletion, 168
- influence of Na, 169
- Se cap layer, 164
- solar cell, 128
cubic ZnO, 4
CVD
- atmospheric pressure (APCVD), 235, 238, 241
- deposition temperature, 261
- grain size, 245, 247
- growth kinetics, 238, 239
- low pressure (LPCVD), 239
- precursors, 236

D

damp-heat test, 368
Debye-temperature, 112-114
defect annealing, 21
defects
- antisites, 14
- concentration, 15
- concentration in ZnO, 19
- formation enthalpy, 15
- formation enthalpy for ZnO, 16
- Frenkel, 14, 17
- in ZnO, 14-23
- oxygen dumbbell interstitial, 17, 20, 21
- oxygen interstitial, 14
- oxygen split interstitial, 17
- oxygen vacancy, 14, 17, 19, 35, 38
- oxygenvacancies, 38, 39
- Schott ky, 14
- self compensation, 18
- transition energies, 18
- zinc interstitial, 14, 19, 35, 38, 39
- zinc vacancy, 14, 17, 18
demonstrator devices, 336
density, 6 dielectric constants, 85, 91, 105
- MgZnO, 91
- ZnO, 91
dielectric function, 89-90
- ZnO temperature, 113
- ZnO VIS-VUV, 108, 113
diffusion
- in ZnO, 19-23
- migration enthalpy, 19, 21
- of oxygen in ZnO, 20-22
- of zinc in ZnO, 21, 23
doping
- of CVD ZnO films, 266
doping efficiency, 18, 203, 249, 257, 272, 273
doping limits, 18
- for ZnO and In₂ O₃ , 19
doping uniformity
- of CVD ZnO films, 257
droplets, 304

E

effective electron mass, 103
electroluminescence, 26
electron mobility
- of AP-CVD ZnO films, 257
- of CVD ZnO films, 258
electron-phonon interaction, 112
electronic structure, 12
ellipsometry, 81, 88
- data analysis, 89
- generalized, 89
- standard, 88
energy band diagram, 126
epitaxial ZnO thin films, 313
- n-type doped, 322
- pn-junctions, 344
- p-type doped, 322, 344
- AFM, 319
- applications, 336
- Bragg reflectors, 340
- carrier concentration, 323
- cathodoluminescence, 327, 338
- chemical composition, 331
- composition transfer, 334
- deep level transient spectroscopy, 325
- demonstrator devices, 336
- diffusion barrier layer, 322
- doping, 331
electrical properties, 322
excitons, 329
- Hall mobility, 323
- highlights, 344
- magnetic domain formation, 337
- phonons, 329
- photoluminescence, 327
- quantum well structures, 340
- resistivity, 323
- results of the Leipzig group, 335
- RHEED, 314
- Schottky contact, 327, 341
- scintillators, 338
- semiinsulating, 323
- structure, 314
- surface morphology, 319
- TEM, 314
- temperature-dependent Hall effect, 325
- trace element concentrations, 334
- XRD, 314
etching behavior
- acidic solution, 370, 380, 382, 384, 386
- alkaline solution, 380, 382, 386
- discussion, 389
- influence of aluminum doping, 385
- influence of deposition pressure, 384
- influence of glass substrate, 392
- influence of hidden parameters, 387
- influence of substrate temperature, 384
- influence of working point, 386
- ion beam treatment, 387
- modified Thornton model, 384
- plasma etching, 388
- polycrystalline films, 382
- single crystal, 380
etching of sputtered ZnO layers, 213
excimer laser, 309
excitons, 108, 109, 111, 113

F

Fermi level pinning, 127
- at CdS/ZnO interface, 160, 164
- at In₂ S₃ /ZnO interface, 177

field effect transistor, 26

figure of merit, 287

formation enthalpy, 6, 166

free-charge-carriers, 80, 86, 102-105

fundamental absorption edge, 86

fundamental PLD processes
- ablation, 306
- ablation threshold, 308
- absorption, 306
- condensation, 308
film growth, 308
- nucleation, 308
- plasma expansion, 307

G

Ga₂ O₃ , 166
Grüneisen parameters, 97
grain boundaries, 59
grain boundary scattering, 257, 259, 278
grain size
- of CVD films, 247
- of LPCVD films, 245, 247
growth of ZnO single crystals, 9

H

Hall coefficient, 44, 46
Hall effect, 37
hidden effects, 310
high pressure phase, 5

high-Tc superconductor, 303
high-pressure PLD, 348
hydrogen, 19

I

In₂ O₃ , 5, 6, 18, 166
index of refraction, 105
- birefringence, 106
- MgZnO, 106, 108
- temperature, 107
- ZnO, 106, 108
- MgZnO, 107
- temperature, 106
- ZnO, 107
interface dipole
- at In₂ S₃ /ZnO interface, 177
ionization potential
influence on band alignment, 160
- of CdS, 144
- of CdTe, 144
- of ZnO, 143
ionized impurity scattering, 257
ITO, 18, 19, 25, 227

L

laser pulse energy, 310
laser-MBE, 347
lattice mismatch, 128
LCAO theory, 12
LCD display, 25
light scattering, 369
Lambertian scattering, 402
- of APCVD ZnO, 259
- of LPCVD ZnO, 259, 260
light trapping, 369, 370, 375
- periodic gratings, 376
- textured glass, 376
- tin oxide, 375
- zinc oxide (CVD), 376
- zinc oxide (texture etched), 376
low energy ion scattering (LEIS), 133
Lydanne-Sachs-Teller relation, 85

M

magnetic semiconductors, 27
material properties, 6

micromorph Si solar cell, 284, 285
mobility, 38, 42-53, 377
- as a function of carrier concentration, 49
model dielectric function, 85-88, 109
- critical points, 86, 87
- excitons, 87
- free charge carriers, 86
- phonons, 85
- plasmons, 86
module
- encapsulation, 368
multi-element compounds, 304

N

Nd-YAG laser, 309
nucleation
- amorphous layer, 155, 164
- oxygen dissociation, 138
nucleation layer, 268

O

organic LED, 25, 227
organic solar cells, 227

P

p-d repulsion, 12
peroxide, 7, 17, 138, 153, 154
phase diagram, 7
phonons, 83-84, 92-102, 112
- broadening parameters, 80, 100-102
- MgZnO, 99-100
- rocksalt-structure, 84
- wurtzite-structure, 83
- ZnO, doped, 98-99
- ZnO, undoped, 92-96
pressure, 96
temperature, 95-96
photoelectron spectroscopy, 128
- interface studies, 129
- of ZnO films, 133
plasmon excitation, 133, 148, 149
piezoelectric coefficient, 6 piezoelectric properties, 1, 26, 213
Plasmons, 80, 86, 102-105
PLD chamber, 311
PLD parameters, 312
pulsed electron beam
- deposition, 347
pulsed laser deposition, 303
- advanced PLD techniques, 346
- basics, 303
- demonstrator devices, 336
- epitaxial ZnO thin films, 313
- flexibility, 313
- fundamental processes, 305
- history, 303
- instrumentation, 309
- modelling, 305
- nanostructures, 348
plasma diagnostics, 305
- ZnO growth parameters, 309

Q

quantum well structures, 13

R

radiation resistance, 21
Raman scattering, 81, 84
- scattering configurations, 84
- selection rules, 85
residual conductivity, 18, 19
rocksalt structure, 5

roll-to-roll process, 366

S

sapphire substrate, 313
SAW devices, 213
ScAlMgO₄ substrate, 313
scattering processes
- acoustical mode scattering, 44
- dislocation scattering, 57
- grain boundaries, 59
- ionized impurity scattering, 45
- neutral impurity scattering, 48
- optical mode scattering, 43
- piezoelectric mode scattering, 44
Schot tky contact, 126
- of ZnO, 127
Seebeck coefficient, 38
segregation, 26
self compensation, 18
sheet resistance, 372
Silicon, 6 silicon
- absorption, 369
- absorption coefficient, 364
- amorphous silicon, 363
- band structure, 361
- bandgap, 364
- crystalline silicon, 361
- defects, 362
- microcrystalline silicon, 363
- nanocrystalline silicon, 363
- polycrystalline silicon, 363
SnO₂ , 5, 6 solar cells
- J/V-curve, 362
- back reflector, 361, 365, 376, 399
- efficiency, 363, 403, 404
- fill factor, 362
- heterojunction, 361
- internal electric field, 362
- light induced degradation, see Staebler-Wronski effect
- light trapping, 369, 370, 397
- module, see solar modules
- n-i-p structure, 361
- open circuit voltage, 362
- optical losses, 372
- optical simulation, 372
- p-i-n structure, 361
- photo current, 362
- quantum efficiency, 366, 371, 396
short circuit current, 362
stability, 367
structure, 365
substrate configuration, 365
superstrate configuration, 365
- tandem structure, 366
- TCO-p contact, 394
solar modules, 373
- active area, 374
- aperture area, 374
- cell width, 374
- dead area, 374
- efficiency, 403
- encapsulation, 366
- interconnection area, 374
series-connection, 373
space group, 6

spin-orbit coupling, 110, 112
spintronics, 27
sputter damage, 128
sputter yield, 190
Staebler-Wronski effect, 363, 367, 400
STM of ZnO surfaces, 132, 133
stoichiometry, 7, 8
- of sputtered ZnO, 134
strain, 80, 112, 114
sublimation, 7 surface acoustic wave devices, 26, 27
surface roughness, 247, 248
surface states of ZnO, 140
surface structure
stability of polar surfaces, 132
- wurtzite lattice, 132
- wurtzite(1010), 132
- wurtzite(1120), 132
- zincblende lattice, 132
- zincblende(110), 132
- zincblende(111), 132
- zincblende(111), 133
- ZnO(0001) (0001), 132, 133
surface termination, 132, 213
- of ZnO, 144

T

texture of sputtered ZnO films, 132, 144, 145, 157
thermal conductivity, 6

thermal expansion, 8

thermal expansion coefficient, 6

thermovoltage, 37
thin film solar cells, 24
tin oxide, 375
transparent electrodes, 24
two-oscillator model, 112, 116
- parameters, 114

V

valence band offset, 126
valence-band ordering, 110, 112
vapor pressure, 7 varistor, 53
varistors, 25
Varshni model, 112
- parameters, 113
volume deposition rate, 304

W

work function of ZnO, 142, 143

Y

YBa₂ Cu₃ O₇ __δ , 303

Z

zinc oxide
- C _A1 , 370
- doping level, 370
- electrical properties, 372, 378
- etching behavior, see etching behavior haze, 371
- optical properties, 369, 370, 378
- parasitic absorption, 401, 402
- roughness, 371
- sputter deposition, 377, 403, 404
- surface texture, 371, 397
Zn resources, 3
Zn₂ SiP₄ , 26
ZnGa₂ O₄ , 26
ZnO ceramics, 26
ZnO nanostructures, 11
ZnO single crystals growth of, 9, 10
ZnO surfaces, 131-149
ZnO:Al, see zinc oxide